The new open access IEEE publication, IEEE Journal of the Electron Devices Society, which published Eric Fossum's pinned PD review, now publishes too more papers on photodiodes:
"Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors" by Goiffon, V.; Estribeau, M.; Michelot, J.; Cervantes, P.; Pelamatti, A.; Marcelot, O.; Magnan, P.
Institut Suprieur de l'Aeronautique et de l'Espace (ISAE), Universite de Toulouse, Pyxalis
"Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors" by Chao, C.Y.; Chen, Y.; Chou, K.; Sze, J.; Hsueh, F.; Wuu, S.
TSMC
Thanks to DSSB for the link!
"Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors" by Goiffon, V.; Estribeau, M.; Michelot, J.; Cervantes, P.; Pelamatti, A.; Marcelot, O.; Magnan, P.
Institut Suprieur de l'Aeronautique et de l'Espace (ISAE), Universite de Toulouse, Pyxalis
"Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors" by Chao, C.Y.; Chen, Y.; Chou, K.; Sze, J.; Hsueh, F.; Wuu, S.
TSMC
Thanks to DSSB for the link!
