"Teledyne DALSA Semiconductor’s 150mm CCD process offers surface or buried channel operation at up to 15V with two or three layers of polysilicon and one, two or three layers of metal. A modular processing approach allows our foundry customers to adjust process parameters to meet the most demanding requirements for CTE (greater than 99.999%), charge storage capacity, and dark current (lower than 1nA/cm2). The base process uses 1X projection lithography with 2.5µm design rules, allowing die sizes of up to 100mm X 100mm. Where required, tighter alignment tolerances and smaller feature sizes can be obtained by using 5X lithography, using a mix and match or all-stepper approach. The maximum die size attainable with the stepper is 22mm X 22mm, but larger sensors can be fabricated using stitching."
DALSA CCD Foundry Business
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I'm not sure if this is a fresh news, but Teledyne DALSA expands its foundry services to CCD process:
"Teledyne DALSA Semiconductor’s 150mm CCD process offers surface or buried channel operation at up to 15V with two or three layers of polysilicon and one, two or three layers of metal. A modular processing approach allows our foundry customers to adjust process parameters to meet the most demanding requirements for CTE (greater than 99.999%), charge storage capacity, and dark current (lower than 1nA/cm2). The base process uses 1X projection lithography with 2.5µm design rules, allowing die sizes of up to 100mm X 100mm. Where required, tighter alignment tolerances and smaller feature sizes can be obtained by using 5X lithography, using a mix and match or all-stepper approach. The maximum die size attainable with the stepper is 22mm X 22mm, but larger sensors can be fabricated using stitching."
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"Teledyne DALSA Semiconductor’s 150mm CCD process offers surface or buried channel operation at up to 15V with two or three layers of polysilicon and one, two or three layers of metal. A modular processing approach allows our foundry customers to adjust process parameters to meet the most demanding requirements for CTE (greater than 99.999%), charge storage capacity, and dark current (lower than 1nA/cm2). The base process uses 1X projection lithography with 2.5µm design rules, allowing die sizes of up to 100mm X 100mm. Where required, tighter alignment tolerances and smaller feature sizes can be obtained by using 5X lithography, using a mix and match or all-stepper approach. The maximum die size attainable with the stepper is 22mm X 22mm, but larger sensors can be fabricated using stitching."