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As mentioned in
Theses post, Oregon State University published Drake A. Miller's PhD Thesis "
Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology". The thesis is quite rich in experimental data os pixel source follower noise. The figure below shows more than order of magnitude variations in 1/f noise across the wafer:
 |
Noise spectral power plots of 10 devices taken from
10 different locations across the wafer (see inset). |
Any channel doping, such as Vth adjust, significantly increases 1/f and RTS noise:
 |
Box plots of source follower noise power spectrum plots.
Red (Dark) boxes are doped devices.
Green (Light) boxes are undoped “native” transistors. |
Few Vth adjust splits were measured:
It's not clear why S4 and S7 are not shown, but S1-S3 clearly show noise improvement:
The total read noise histogram clearly demonstrates the advantage of lightly doped source follower:
RTS Statistics shows the same:
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