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As
BD pointed in comments,
Caeleste publications page has been updated to include the latest CNES Workshop 2011 presentations. The most interesting one is "
A 0.5 noise electrons CMOS pixel" by Bart Dierickx, Nayera Ahmed, and Benoit Dupont. The presentation explains the 1/f and RTS noise reduction principle by cycling the pMOSFET between accumulation and inversion:
150 inversion-accumulation cycles are averaged to reduce pixel noise down to 0.5e level:
The result was measured on the technology demonstrator based on 100um standalone test structure, ~7μm MOSFET area, pixel is used in CTIA mode with >1000μV/e- conversion gain:
Another new CNES Caeleste presentation is "
High QE, Thinned Backside-Illuminated, 3e- RoN, Fast 700fps, 1760×1760 Pixels Wave-Front Sensor Imager with Highly Parallel Readout."
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