"The Sony 12 megapixel CMOS image sensor is fabricated using a 4 metal (Cu), 90 nm CMOS image sensor process. The backside illuminated die is wafer bonded to an underling control ASIC using through silicon vias (TSVs) to provide die-to-die interconnections. The image sensor features a 1.22 µm large pixel with RGB color filters and a single layer of microlenses. Four pixels share a common readout circuit comprising four transfer gates, a reset gate, select gate and source follower in a 1.75T architecture."
TechInsights iPhone 6s, 6s Plus 12MP Sensor Report
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TechInsights announces a reverse engineering report of 12MP Sony sensor from Apple iPhone 6s and 6s Plus, to be published on Dec 22, 2015:
"The Sony 12 megapixel CMOS image sensor is fabricated using a 4 metal (Cu), 90 nm CMOS image sensor process. The backside illuminated die is wafer bonded to an underling control ASIC using through silicon vias (TSVs) to provide die-to-die interconnections. The image sensor features a 1.22 µm large pixel with RGB color filters and a single layer of microlenses. Four pixels share a common readout circuit comprising four transfer gates, a reset gate, select gate and source follower in a 1.75T architecture."
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"The Sony 12 megapixel CMOS image sensor is fabricated using a 4 metal (Cu), 90 nm CMOS image sensor process. The backside illuminated die is wafer bonded to an underling control ASIC using through silicon vias (TSVs) to provide die-to-die interconnections. The image sensor features a 1.22 µm large pixel with RGB color filters and a single layer of microlenses. Four pixels share a common readout circuit comprising four transfer gates, a reset gate, select gate and source follower in a 1.75T architecture."
