A Sampling-Based 128×128 Direct Photon-Counting X-Ray Image Sensor With 3 Energy Bins and Spatial Resolution of 60μm/pixel
H-S. Kim(1), S-W. Han(2), J-H. Yang(1), S. Kim(2), Y. Kim(2), S. Kim(2), D-K. Yoon(2), J-S. Lee(2), J-C. Park(2), Y. Sung(2), S-D. Lee(2), S-T. Ryu(1), G-H. Cho(1)
(1) KAIST, Daejeon, Korea;
(2) Samsung Advanced Institute of Technology, Yongin, Korea
A 1.36μW Adaptive CMOS Image Sensor With Reconfigurable Modes of Operation From Available Energy/Illumination for Distributed Wireless Sensor Network
J. Choi, S. Park, J. Cho, E. Yoon;
University of Michigan, Ann Arbor, MI
A 0.5V 4.95μW 11.8fps PWM CMOS Imager With 82dB Dynamic Range and 0.055% Fixed-Pattern-Noise
M-T. Chung, C-C. Hsieh;
National Tsing Hua University, Hsinchu, Taiwan
CMOS Capacitive Biosensor With Enhanced Sensitivity for Label-Free DNA Detection
K-H. Lee, S. Choi, J. Lee, J-B. Yoon, G-H. Cho;
KAIST, Daejeon, Korea
A 100Mphoton/s Time-Resolved Mini-Silicon Photomultiplier With On-Chip Fluorescence Lifetime Estimation in 0.13μm CMOS Imaging Technology
D. Tyndall(1), B. Rae(2), D. Li(3), J. Richardson(4), J. Arlt(1), R. Henderson(1)
(1) University of Edinburgh, Edinburgh, United Kingdom
(2) STMicroelectronics, Edinburgh, United Kingdom
(3) University of Sussex, Brighton, United Kingdom
(4) Dialog Semiconductor, Edinburgh, United Kingdom
Session 22 has more content from the industry:
An 83dB-Dynamic-Range Single-Exposure Global-Shutter CMOS Image Sensor With In-Pixel Dual Storage
M. Sakakibara(1), Y. Oike(1), T. Takatsuka(1), A. Kato(1), K. Honda(1), T. Taura(1), T. Machida(1), J. Okuno(2), A. Ando(2), T. Fukuro(2), T. Asatsuma(1), S. Endo(2), J. Yamamoto(2), Y. Nakano(2), T. Kaneshige(2), I. Yamamura(1), T. Ezaki(1), T. Hirayama(1)
(1) Sony, Atsugi, Japan;
(2) Sony Semiconductor, Kumamoto, Japan
A Global-Shutter CMOS Image Sensor With Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous
Y. Tochigi(1), K. Hanzawa(1), Y. Kato(1), R. Kuroda(1), H. Mutoh(2), R. Hirose(3), H. Tominaga(3), K. Takubo(3), Y. Kondo(3), S. Sugawa(1)
(1) Tohoku University, Sendai, Japan;
(2) Link Research, Odawara, Japan;
(3) Shimadzu, Kyoto, Japan
A 0.7e- rms Temporal-Readout-Noise CMOS Image Sensor for Low-Light-Level Imaging
Y. Chen(1), Y. Xu(1), Y. Chae(1), A. Mierop(2), X. Wang(3), A. Theuwissen(1,4)
(1) Delft University of Technology, Delft, The Netherlands
(2) Teledyne DALSA Semiconductors, Eindhoven, The Netherlands
(3) CMOSIS NV, Antwerp, Belgium;
(4) Harvest Imaging, Bree, Belgium
A 256×256 CMOS Image Sensor With ΔΣ-Based Single-Shot Compressed Sensing
Y. Oike(1,2), A. El Gamal(1);
(1) Stanford University, Stanford, CA;
(2) Sony, Atsugi, Japan
A 33Mpixel 120fps CMOS Image Sensor Using 12b Column-Parallel Pipelined Cyclic ADCs
T. Watabe(1), K. Kitamura(1), T. Sawamoto(2), T. Kosugi(3), T. Akahori(3), T. Iida(3), K. Isobe(3), T. Watanabe(3), H. Shimamoto(1), H. Ohtake(1), S. Aoyama(3), S. Kawahito(2,3), N. Egami(1)
(1) NHK Science & Technology Research Laboratories, Tokyo, Japan
(2) Shizuoka University, Hamamatsu, Japan;
(3) Brookman Technology, Hamamatsu, Japan
A 14b Extended Counting ADC Implemented in a 24MPixel APS-C CMOS Image Sensor
J-H. Kim, W-K. Jung, S-H. Lim, Y-J. Park, W-H. Choi, Y-J. Kim, C-E. Kang, J-H. Shin, K-J. Choo, W-B. Lee, J-K. Heo, B-J. Kim, S-J. Kim, M-H. Kwon, K-S. Yoo, J-H. Seo, S-H. Ham, C-Y. Choi, G-S. Han
Samsung Electronics, Yongin, Korea
A 1.5Mpixel RGBZ CMOS Image Sensor for Simultaneous Color and Range Image Capture
W. Kim(1), W. Yibing(2), I. Ovsiannikov(2), S. Lee(1), Y. Park(1), C. Chung(1), E. Fossum(1,2)
(1) Samsung Electronics, Hwasung, Korea;
(2) Samsung Semiconductor, Pasadena, CA
A QVGA-Range Image Sensor Based on Buried-Channel Demodulator Pixels in 0.18μm CMOS With Extended Dynamic Range
L. Pancheri, N. Massari, M. Perenzoni, M. Malfatti, D. Stoppa
Fondazione Bruno Kessler, Trento, Italy
A 1920×1080 3.65μm-Pixel 2D/3D Image Sensor With Split and Binning Pixel Structure in 0.11μm Standard CMOS
S-J. Kim, B. Kang, J. Kim, K. Lee, C-Y. Kim, Kinam Kim
Samsung Advanced Institute of Technology, Yongin, Korea
Update: As AT wrote in comments, Session 15 on mm-Wave and THz Techiques has a couple of imaging papers:
A 1kPixel CMOS Camera Chip for 25fps Real-Time Terahertz Imaging Applications
H. Sherry(1,2,3), J. Grzyb(2), Y. Zhao(2), R. Al Hadi(2), A. Cathelin(1), A. Kaiser(3), U. Pfeiffer(2)
(1) STMicroelectronics, Crolles, France;
(2) University of Wuppertal, Wuppertal, Germany
(3) IEMN / ISEN, Lille, France
280GHz and 860GHz Image Sensors Using Schottky-Barrier Diodes in 0.13μm Digital CMOS
R. Han(1,2), Y. Zhang(3), Y. Kim(3), D. Kim(3), H. Shichijo(3), E. Afshari(2), K. O(3)
(1) University of Florida, Gainesville, FL;
(2) Cornell University, Ithaca, NY
(3) University of Texas at Dallas, Richardson, TX
Session 18 "Innovative Techniques in Emerging Technologies" has a paper:
Towards Ultra-Dense Arrays of VHF NEMS With FDSOI-CMOS Active Pixels for Sensing Applications
G. Arndt, C. Dupré, J. Arcamone, G. Cibrario, O. Rozeau, L. Duraffourg, E. Ollier, E. Colinet
CEA-LETI-MINATEC, Grenoble, France
Forum F4 on Computational Imaging has interesting presentations as well:
Overview of Computational Photography and Imaging
Shinsaku Hiura,
Hiroshima City University, Hiroshima, Japan
Interest Point and Local Descriptor Generation in Silicon
Graham Kirsch, Aptina UK, Berkshire, United Kingdom
Face Detection in Embedded Systems
Petronel Bigioi,
DigitalOptics, San Jose, CA
Light Field Imaging with Regular Arrays of Inexpensive Cameras (RayCam)
Kartik Venkataraman,
Pelican Imaging, Mountain View, CA
Super-Resolution by Multiple Shots: From Myths to Methods
Lucas van Vliet,
Delft University of Technology, Delft, The Netherlands
Image and Depth from a Conventional Camera with a Coded Aperture
Bill Freeman,
Massachusetts Institute of Technology, Cambridge, MA
Is Compressed Sensing Relevant to Image Sensors?
Abbas El Gamal,
Stanford University, Stanford, CA
Processing Device Prospectives for Computational Imaging Applications
Yuki Kobayashi,
Renesas Electronics, Kanagawa, Japan
